Samsung Electronics Expects HBM to Account for Nearly 30% of DRAM Wafer Capacity Next Year

Samsung Electronics Vice President Kim Taewoo expects that HBM will account for nearly 30% of the total wafer capacity of DRAM manufacturers next year, up from the current ratio of about 20%. He pointed out that HBM competes with traditional DRAM for the same batch of wafer capacity, and expanding HBM output may squeeze the supply of traditional DRAM. TrendForce predicts that by the end of 2027, the HBM wafer input from the three major global HBM suppliers will account for 30% of the total DRAM wafer input, but in terms of storage capacity, it will only contribute about 13% of the total DRAM supply. Samsung began mass production of HBM4 in February this year and provided 12-layer HBM4E samples to customers including NVIDIA in May. It is expected that Samsung's average monthly wafer input for HBM will increase from about 180,000 wafers this year to about 250,000 wafers next year. TrendForce also stated that demand for AI servers continues, and HBM and general DRAM will share limited advanced process capacity. The storage supply will remain tight in 2027, and the price expectations for HBM in 2027 have been raised, with an expected year-on-year increase of 121% in the average selling price. Due to limited supply and rising system costs, 8-layer HBM is expected to become a priority option for many manufacturers in 2027, with its price per Gb expected to be about 10% to 20% higher than that of 12-layer products.

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